The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Jul. 18, 2008
Harry Chuang, Austin, TX (US);
Hung-chih Tsai, Daliao, TW;
Keh-chiang Ku, Sindan, TW;
Kong-beng Thei, Hsin-Chu, TW;
Mong Song Liang, Hsin-Chu, TW;
Harry Chuang, Austin, TX (US);
Hung-Chih Tsai, Daliao, TW;
Keh-Chiang Ku, Sindan, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Mong Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device and a method for forming a metal silicide is presented. A device, which includes a gate region, a source region, and a drain region, is formed on a substrate. A metal is disposed on the substrate, followed by a first anneal, forming a metal silicide on at least one of the gate region, the source region, and the drain region. The unreacted metal is removed from the substrate. The metal silicide is implanted with atoms. The implant is followed by a super anneal of the substrate.