The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
May. 21, 2007
Chun-feng Nieh, Baoshan Township, TW;
Keh-chiang Ku, Sindan, TW;
Nai-han Cheng, Hsin-Chu, TW;
Chi-chun Chen, Kaohsiung, TW;
Li-te S. Lin, Hsin-Chu, TW;
Chun-Feng Nieh, Baoshan Township, TW;
Keh-Chiang Ku, Sindan, TW;
Nai-Han Cheng, Hsin-Chu, TW;
Chi-Chun Chen, Kaohsiung, TW;
Li-Te S. Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate stack over the semiconductor substrate; implanting carbon into the semiconductor substrate; and implanting an n-type impurity into the semiconductor substrate to form a lightly doped source/drain (LDD) region, wherein the n-type impurity comprises more than one phosphorous atom. The n-type impurity may include phosphorous dimer or phosphorous tetramer.