The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Oct. 17, 2008
Cheng-lung Hung, Hsinchu County, TW;
Yong-tian Hou, Singapore, SG;
Keh-chiang Ku, Sindan, TW;
Chien-hao Huang, Banciao, TW;
Cheng-Lung Hung, Hsinchu County, TW;
Yong-Tian Hou, Singapore, SG;
Keh-Chiang Ku, Sindan, TW;
Chien-Hao Huang, Banciao, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a high-k dielectric layer over a semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping layer, forming a semiconductor layer over the metal layer, performing an implantation process on the semiconductor layer, the implantation process using a species including F, and forming a gate structure from the plurality of layers including the high-k dielectric layer, capping layer, metal layer, and semiconductor layer.