The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Sep. 08, 2011
Chun-feng Nieh, Hsin-chu, TW;
Keh-chiang Ku, Sindan, TW;
Nai-han Cheng, Hsin-Chu, TW;
Chi-chun Chen, Kaohsiung, TW;
Li-te S. Lin, Hsin-Chu, TW;
Chun-Feng Nieh, Hsin-chu, TW;
Keh-Chiang Ku, Sindan, TW;
Nai-Han Cheng, Hsin-Chu, TW;
Chi-Chun Chen, Kaohsiung, TW;
Li-Te S. Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure comprises a gate stack in a semiconductor substrate and a lightly doped source/drain (LDD) region in the semiconductor substrate. The LDD region is adjacent to a region underlying the gate stack. The LDD region comprises carbon and an n-type impurity, and the n-type impurity comprises phosphorus tetramer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile