The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Dec. 05, 2006
Applicants:
Keh-chiang Ku, Sindan, TW;
Pang-yen Tsai, Jhu-bei, TW;
Chun-feng Nieh, Baoshan Township, TW;
Li-ting Wang, Taiman, TW;
Inventors:
Keh-Chiang Ku, Sindan, TW;
Pang-Yen Tsai, Jhu-bei, TW;
Chun-Feng Nieh, Baoshan Township, TW;
Li-Ting Wang, Taiman, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a semiconductor structure includes providing a semiconductor substrate, forming a gate stack on the semiconductor substrate, and epitaxially growing a lightly-doped source/drain (LDD) region adjacent the gate stack, wherein carbon is simultaneously doped into the LDD region.