The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Dec. 29, 2006
Chien-hao Chen, Chuangwei Township, TW;
Tze-liang Lee, Hsinchu, TW;
Shih-chang Chen, Hsin-Chu, TW;
Keh-chiang Ku, Sindan, TW;
Chun-feng Nieh, Baoshan Township, TW;
Li-ting Wang, Tainan, TW;
Hsun Chang, Hsinchu, TW;
Chien-Hao Chen, Chuangwei Township, TW;
Tze-Liang Lee, Hsinchu, TW;
Shih-Chang Chen, Hsin-Chu, TW;
Keh-Chiang Ku, Sindan, TW;
Chun-Feng Nieh, Baoshan Township, TW;
Li-Ting Wang, Tainan, TW;
Hsun Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode on the gate dielectric; forming a source/drain region adjacent the gate dielectric and the gate electrode; forming an absorption-capping layer over the source/drain region and the gate electrode; performing an activation by applying a high-energy light to the absorption-capping layer; and removing the absorption-capping layer.