Hsun Chang

Title: A Glimpse into the Innovations of Hsun Chang

Introduction

Hsun Chang, an accomplished inventor based in Hsin-Chu, Taiwan, has made significant contributions to the field of semiconductor technology. With a portfolio of five patents, his work has been pivotal in advancing methods that enhance the performance of semiconductor devices.

Latest Patents

Hsun Chang's latest innovations include groundbreaking patents focused on semiconductor device systems and methods of manufacture. One of his notable patents, titled "Source/drain carbon implant and RTA anneal, pre-SiGe deposition," details a system designed to retard dopant out-diffusion from a stressor. This invention involves a semiconductor substrate integrated with a gate structure, where a source and drain are positioned on either side of the gate. Through precision etching, recessed regions are created within the source and drain, which are then embedded with doped stressors. Additionally, a barrier dopant is incorporated into these regions to further optimize performance.

Another significant patent by Chang revolves around a method for enhancing dopant activation while minimizing additional dopant diffusion. This innovative approach includes creating shallow, lightly-doped source/drain extension regions in a semiconductor substrate, followed by a series of anneal processes to ensure optimal dopant activation without compromising device integrity.

Career Highlights

Hsun Chang is currently affiliated with Taiwan Semiconductor Manufacturing Company, Ltd. His extensive experience and insights in semiconductor manufacturing have allowed him to redefine processes that elevate the efficiency and reliability of semiconductor devices. His innovative approach has played a crucial role in the progress of semiconductor technology.

Collaborations

Throughout his career, Hsun Chang has had the privilege of collaborating with esteemed colleagues, including Chun-Feng Nieh and Chien-Hao Chen. These collaborations have fostered an environment of creativity and innovation, further enhancing the advancements in semiconductor technologies.

Conclusion

Hsun Chang is a remarkable inventor whose contributions to the semiconductor industry have substantially influenced the manufacturing processes and performance of modern devices. His dedication to innovation is reflected in his array of patents, and his collaborative efforts continue to inspire advancements in technology. As he progresses in his career at Taiwan Semiconductor Manufacturing Company, Ltd., the impact of his work will undoubtedly resonate within the industry for years to come.