The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Mar. 26, 2007
Keh-chiang Kuo, Taipei County, TW;
Chien-hao Chen, Yilan County, TW;
Chun-feng Nieh, Hsinchu County, TW;
Li-ping Huang, Taipei, TW;
Hsun Chang, Hsinchu, TW;
Li-ting Wang, Tainan, TW;
Chih-chiang Wang, Hsinchu, TW;
Tze-liang Lee, Hsinchu, TW;
Keh-Chiang Kuo, Taipei County, TW;
Chien-Hao Chen, Yilan County, TW;
Chun-Feng Nieh, Hsinchu County, TW;
Li-Ping Huang, Taipei, TW;
Hsun Chang, Hsinchu, TW;
Li-Ting Wang, Tainan, TW;
Chih-Chiang Wang, Hsinchu, TW;
Tze-Liang Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of enhancing dopant activation without suffering additional dopant diffusion, includes forming shallow and lightly-doped source/drain extension regions in a semiconductor substrate, performing a first anneal process on the source/drain extension regions, forming deep and heavily-doped source/drain regions in the substrate adjacent to the source/drain extension regions, and performing a second anneal process on source/drain regions. The first anneal process is a flash anneal process performed for a time of between about 1 millisecond and 3 milliseconds, and the second anneal process is a rapid thermal anneal process performed for a time of between about 1 second and 30 seconds.