The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Mar. 26, 2009
Peng-soon Lim, Johor, TW;
Yong-tian Hou, Singapore, SG;
Chien-hao Chen, Chuangwei Township, Ilan County, TW;
Chi-chun Chen, Kaohsiung, TW;
Peng-Soon Lim, Johor, TW;
Yong-Tian Hou, Singapore, SG;
Chien-Hao Chen, Chuangwei Township, Ilan County, TW;
Chi-Chun Chen, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a substrate having a first region and a second region, forming first and second gate stacks in the first and second regions, respectively, the first gate stack including a first dummy gate and the second gate stack including a second dummy gate, removing the first dummy gate in the first gate stack thereby forming a first trench and removing the second dummy gate in the second gate stack thereby forming a second trench, forming a first metal layer in the first trench and in the second trench, removing at least a portion of the first metal layer in the first trench, forming a second metal layer in the remainder of the first trench and in the remainder of the second trench, reflowing the second metal layer, and performing a chemical mechanical polishing (CMP).