Tokyo, Japan

Yasuhiro Kagawa

This inventor holds 31 USPTO granted patents and 3 published patent applications, primarily in Silicon Carbide Semiconductors. Top assignees: Mitsubishi Electric Corporation, Renesas Electronics Corporation. Active years: 2012-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasuhiro Kagawa. Retrieved from https://idiyas.com/inventor/yasuhiro-kagawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 31 

% Patents Active = 93.5

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 64(Granted Patents)


Company Filing History:


Years Active: 2012-2024

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Areas of Expertise:
SiC-MOSFET
Silicon Carbide
Power Converter
Semiconductor Device
Manufacturing Method
Power Amplifier
Trench-Gate
Insulated Gate
Power Semiconductor
31 patents (USPTO):Explore Patents

Title: **The Innovative Contributions of Yasuhiro Kagawa**

Introduction

Yasuhiro Kagawa, an accomplished inventor based in Tokyo, Japan, has made significant strides in the field of semiconductor technology. With an impressive portfolio of 31 patents, Kagawa's inventions have pushed the boundaries of efficiency and performance in electronic devices. His pioneering work demonstrates the importance of innovation in the ever-evolving world of technology.

Latest Patents

Among Kagawa's recent patents is his work on the Silicon Carbide (SiC) MOSFET. This invention aims to suppress the decrease in withstand voltage and enhance the ON voltage, allowing for increased body diode current. The SiC-MOSFET comprises a source region formed on a surface layer of a base region, a gate electrode facing a channel region sandwiched between a drift layer and the source region, and a source electrode that contacts the source region. Additionally, it features several embedded regions of a second conductivity type strategically placed to optimize performance.

Kagawa's patents also include innovations in silicon carbide semiconductor devices, power converters, and methods for manufacturing silicon carbide semiconductor devices. His designs feature a drift layer with a first conductivity type provided on a silicon carbide substrate, a well region with a second conductivity type, and a sophisticated gate trench to improve electrical performance and efficiency.

Career Highlights

Yasuhiro Kagawa’s professional journey includes notable associations with leading companies in the semiconductor industry, including Mitsubishi Electric Corporation and Renesas Electronics Corporation. His experiences in these companies have contributed to his extensive knowledge and expertise in the field of semiconductor technology.

Collaborations

Throughout his career, Kagawa has collaborated with talented individuals, including Rina Tanaka and Yutaka Fukui. These collaborations have allowed for the exchange of innovative ideas and have significantly influenced the development of new technologies in the field.

Conclusion

Yasuhiro Kagawa's contributions to semiconductor technology exemplify the power of innovation and collaboration. With a robust portfolio of patents and a career marked by impactful collaborations, he continues to inspire the next generation of inventors and engineers. His work will undoubtedly play a critical role in the future of electronic devices and their advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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