The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Feb. 22, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Yasuhiro Kagawa, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Hiroshi Watanabe, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Chiyoda-ku, JP;
Abstract
There is provided a trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device has a gate electrodeembedded into a trenchpenetrating a base region. The gate electrodeis disposed into a lattice shape in a planar view, and a protective diffusion layeris formed in a drift layerat the portion underlying thereof. At least one of blocks divided by the gate electrodeis a protective contact regionon which the trenchis entirely formed. A protective contactfor connecting the protective diffusion layerat a bottom portion of the trenchand a source electrodeis disposed on the protective contact region