The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Apr. 27, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Yuji Ebiike, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A drift layer has a first conductivity type and is provided on a silicon carbide substrate. A well region has a second conductivity type and is provided on the drift layer. A source region has the first conductivity type and is provided on the well region. A gate trench has an inner surface with a bottom located at a deeper position than the well region and a lateral part continuous with the bottom. An electric field relaxation region has the second conductivity type and has at least a part located below the bottom of the gate trench. A surge relaxation region has the first conductivity type, contacts at least a part of the bottom of the gate trench, and is separated from the drift layer by the electric field relaxation region.