The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Sep. 09, 2015
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Yutaka Fukui, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Kensuke Taguchi, Tokyo, JP;
Nobuo Fujiwara, Tokyo, JP;
Katsutoshi Sugawara, Tokyo, JP;
Rina Tanaka, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A trench-gate semiconductor device including an outside trench, increases reliability of an insulating film at a corner of an open end of the outside trench. The semiconductor device includes: a gate trench reaching an inner part of an n-type drift layer in a cell region; an outside trench outside the cell region; a gate electrode formed inside the gate trench through a gate insulating film; a gate line formed inside the outside trench through an insulating film; and a gate line leading portion formed through the insulating film to cover a corner of an open end of the outside trench closer to the cell region, and electrically connecting the gate electrode to the gate line, and the surface layer of the drift layer in contact with the corner has a second impurity region of p-type that is a part of the well region.