Tokyo, Japan

Rina Tanaka

This inventor holds 26 USPTO granted patents and 5 published patent applications, primarily in Silicon Carbide Semiconductors. Top assignee: Mitsubishi Electric Corporation. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rina Tanaka. Retrieved from https://idiyas.com/inventor/rina-tanaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 100.0

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 36(Granted Patents)


Location History:

  • Chiyoda-ku, JP (2016 - 2019)
  • Tokyo, JP (2016 - 2024)

Company Filing History:


Years Active: 2016-2025

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Power Converter
Manufacturing Method
Insulated Gate
Power Conversion
Gate Trench
Impurity Densities
Trench Design
Power Semiconductor
Device Design
Well Regions
26 patents (USPTO):Explore Patents

Title: Rina Tanaka: A Leading Innovator in Semiconductor Technology

Introduction

Rina Tanaka is an accomplished inventor based in Tokyo, Japan, with an impressive portfolio of 24 patents to her name. Her expertise in semiconductor technology has positioned her as a leading figure in the field, contributing significantly to advancements that enhance device performance and efficiency.

Latest Patents

Among her latest inventions, Rina Tanaka has developed innovative solutions aimed at reducing parasitic capacitance in semiconductor devices. One notable patent describes a semiconductor device that features a base region, a source region, and a second trench that extends through the base region to reach the drift layer. This design includes a protective layer and a source electrode within the second trench that connects to the main components.

Additionally, she has patented a silicon carbide semiconductor device integrated with a Schottky barrier diode within a field-effect transistor. This device includes multiple trenches designed to optimize conductivity and minimize resistance, showcasing her dedication to pushing the boundaries of semiconductor technology.

Career Highlights

Rina Tanaka works for Mitsubishi Electric Corporation, where she has significantly contributed to the company's research and development efforts in semiconductor technology. Her work not only enhances the capabilities of current devices but also sets the groundwork for future innovations that promise to revolutionize the industry.

Collaborations

Throughout her career, Rina has collaborated with talented colleagues, including Yutaka Fukui and Yasuhiro Kagawa. These partnerships have fostered a collaborative environment at Mitsubishi Electric Corporation, enabling the exchange of ideas and contributing to the innovative projects that have emerged from their teamwork.

Conclusion

Rina Tanaka’s contributions to the semiconductor field exemplify the vital role of innovation in advancing technology. Her extensive patent portfolio and ongoing work at Mitsubishi Electric Corporation reflect her dedication to enhancing device functionality and efficiency, positioning her as a prominent figure in the world of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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