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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11251299 B1

PDFFull Text
Date of Patent:
Feb. 15, 2022

Filed:

Mar. 28, 2018

Silicon carbide semiconductor device and manufacturing method of same

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Rina Tanaka, Tokyo, JP;

Katsutoshi Sugawara, Tokyo, JP;

Yutaka Fukui, Tokyo, JP;

Hideyuki Hatta, Tokyo, JP;

Yusuke Miyata, Tokyo, JP;

Assignee:

MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;

Attorney:

Xsensus LLP

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01);
Abstract

A drift layer made of silicon carbide has a first conductivity type. A body region on the drift layer has a second conductivity type. A source region on the body region has the first conductivity type. A gate insulating film is on each inner wall of at least one trench. A protective layer has at least a portion below the trench, is in contact with the drift layer, and has the second conductivity type. A first low-resistance layer is in contact with the trench and the protective layer, straddles a border between the trench and the protective layer in the depth direction, has the first conductivity type, and has a higher impurity concentration than the drift layer. A second low-resistance layer is in contact with the first low-resistance layer, is away from the trench, has the first conductivity type, and has a higher impurity concentration than the first low-resistance layer.

Find Patent Forward Citations

Tanaka, Rina. (2022). Silicon carbide semiconductor device and manufacturing method of same (U.S. Patent No. 11251299). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11251299

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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