Tokyo, Japan

Katsutoshi Sugawara

This inventor holds 26 USPTO granted patents and 7 published patent applications, primarily in Silicon Carbide Semiconductors. Top assignee: Mitsubishi Electric Corporation. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsutoshi Sugawara. Retrieved from https://idiyas.com/inventor/katsutoshi-sugawara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 88.5

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Silicon Carbide
Power Conversion
Semiconductor Device
MOSFET
Manufacturing Method
Power Converter
Gate Trench
Power Semiconductor
26 patents (USPTO):Explore Patents

Title: Innovations of Katsutoshi Sugawara

Introduction

Katsutoshi Sugawara, an esteemed inventor based in Tokyo, Japan, has made significant contributions to the realm of semiconductor technology with a total of 22 patents to his name. His innovative approaches have revolutionized various aspects of semiconductor devices, earning him recognition in his field.

Latest Patents

Among his most recent innovations are two notable patents. The first is focused on an SiC-MOSFET, designed to suppress decreases in withstand voltage while increasing ON voltage and improving body diode current. This semiconductor device features a source region on the surface layer of a base region, a gate electrode facing a channel region, and a plurality of first embedded regions of a second conductivity type strategically positioned to enhance performance.

The second patent addresses reducing parasitic capacitance within semiconductor devices, enhancing accuracy and efficiency. This design includes various components, such as a base region, a source region, a trench that reaches the drift layer, and a source electrode that is electrically connected to crucial layers of the device.

Career Highlights

Katsutoshi Sugawara has spent his career with Mitsubishi Electric Corporation, where he has applied his expertise in semiconductor technology to drive innovation forward. His work has positioned him alongside other prominent figures in the industry, contributing significantly to advancements in electronic components.

Collaborations

Throughout his career, Sugawara has worked in collaboration with talented colleagues including Yutaka Fukui and Rina Tanaka. These partnerships have facilitated a dynamic exchange of ideas, further enhancing the innovative environment at Mitsubishi Electric Corporation.

Conclusion

Katsutoshi Sugawara’s contributions to semiconductor technology underscore the vital role of inventors in advancing industries. With a remarkable portfolio of patents and collaborations with esteemed professionals, his work continues to influence and improve the functionality of electronic devices worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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