The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Dec. 01, 2023
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Motoru Yoshida, Tokyo, JP;
Katsutoshi Sugawara, Tokyo, JP;
Yoshitaka Kimura, Tokyo, JP;
Yutaka Fukui, Tokyo, JP;
Tetsuo Takahashi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H02P 27/08 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 64/252 (2025.01); H10D 30/668 (2025.01); H10D 62/127 (2025.01); H10D 62/8325 (2025.01); H10D 64/62 (2025.01); H02P 27/08 (2013.01);
Abstract
In a silicon carbide semiconductor device, in a plan view, a plurality of source contact holes is intermittently provided in a second direction along a trench gate, and a source electrode is provided on an insulating film and is electrically connected to a source layer via the plurality of source contact holes. Intermittent recesses reflecting the shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate.