The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Oct. 31, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Kazuya Ishibashi, Tokyo, JP;
Katsutoshi Sugawara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device has a cell region, a dividing region dividing the cell region in an expanding direction of a stacking fault band, and a termination region, and includes in a dividing region, a semiconductor layer including a drift region of a first conductivity type and a second well region of a second conductivity type provided in an upper portion of the drift region, a second interlayer insulating film provided on the semiconductor layer, and a source electrode provided on the second interlayer insulating film. The second interlayer insulating film has two second contact holes aligned in an expanding direction of stacking fault band and electrically connecting the source electrode to the second well region. The second well region is formed as one region continuous in the expanding direction of stacking fault band in the region interposed between the two second contact holes in top view.