The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Apr. 11, 2023
Mitsubishi Electric Corporation, Tokyo, JP;
Katsutoshi Sugawara, Tokyo, JP;
Yutaka Fukui, Tokyo, JP;
Kohei Adachi, Tokyo, JP;
Kazuya Ishibashi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a plurality of trenches penetrating through a source region and a base region, and a mesa region as a region between two of the plurality of trenches. A gate electrode that faces the base region with a gate insulating film interposed between the gate electrode and the base region is formed in each trench. An electric field relieving layer is provided immediately below each trench. A super junction structure in which a first pillar layer and a second pillar layer are alternately arranged is formed between the base region and the drift layer. A width of the first pillar layer is equal to or less than a width of the electric field relieving layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile