The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Jun. 25, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Katsutoshi Sugawara, Tokyo, JP;

Yasuhiro Kagawa, Tokyo, JP;

Yutaka Fukui, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H03K 17/687 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7815 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H03K 17/687 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/4238 (2013.01);
Abstract

A semiconductor device includes a trench-type switching element formed in an active region and a trench-type current sense element formed in a current sense region. Below a trench in which a gate electrode of the switching element is embedded, a trench in which a gate electrode of the current sense element is embedded, and a trench formed at the boundary portion between the active region and the current sense region, protective layers are formed, respectively. The protective layer at the boundary portion between the active region and the current sense region has a divided portion that is divided in a direction from the active region to the current sense region.


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