Shanghai, China

Xing Wei

This inventor holds 17 USPTO granted patents and 35 published patent applications, plus 3 CIPO patents and 3 EPO patents. Top assignees: Chinese Academy of Sciences, Zing Semiconductor Corporation, Shanghai Simgui Technology Co., Ltd.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xing Wei. Retrieved from https://idiyas.com/inventor/xing-wei-rzld95za

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 94.1

 

 

Average Co-Inventor Count = 4.1

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Shangha, CN (2014)
  • Shanghai, CN (2013 - 2022)

Company Filing History:


Years Active: 2013-2026

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17 patents (USPTO):Explore Patents

Title: The Innovative Mind of Xing Wei: Exploring His Contributions to Silicon Crystal Engineering

Introduction: Xing Wei, a prominent inventor based in Shanghai, China, has made significant contributions in the field of semiconductor engineering. With a commendable portfolio comprising 12 patents, Xing’s work focuses primarily on innovative methods of characterizing defects in silicon crystals, thereby enhancing the efficiency and reliability of semiconductor production.

Latest Patents: Among his most noteworthy patents is a sophisticated method for characterizing defects in silicon crystals. This method involves a series of steps where the surface of the silicon crystal is etched to a predetermined thickness, followed by LLS scanning to produce a comprehensive map detailing defect sizes and densities. This innovative approach not only reduces the characterization period and cost but also allows for simultaneous identification of multiple defect types, such as vacancies and dislocations, with high accuracy.

Another significant patent from Xing Wei is related to the creation of a silicon-on-insulator structure. This method entails forming a bonded structure comprising two substrates with an insulating layer in between. Through a two-step etching process performed at varying temperatures, a high-quality first film is produced, showcasing a unique approach to silicon wafer technology.

Career Highlights: Xing Wei has gained invaluable experience working at prestigious institutions, such as the Chinese Academy of Sciences and Shanghai Simgui Technology Co., Ltd. His time at these organizations has played a crucial role in shaping his innovative ideas and advancing his research in semiconductor technologies.

Collaborations: Throughout his career, Xing has collaborated with esteemed coworkers, including Xi Wang and Meng Chen. Together, they have contributed to the advancement of semiconductor research and have pushed the boundaries of innovation within the industry.

Conclusion: Xing Wei’s inventive spirit and dedication to enhancing semiconductor technologies exemplify the essence of innovation. His patented methods for characterizing defects in silicon crystals and creating silicon-on-insulator structures have revolutionized the field. As technology continues to evolve, the impact of his contributions will undoubtedly resonate within the industry and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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