The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Mar. 02, 2022
Zing Semiconductor Corporation, Shanghai, CN;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;
Zing Semiconductor Corporation, Shanghai, CN;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;
Abstract
The present application provides a method for characterizing defects in silicon crystal comprising the following steps: etching a surface of the silicon crystal to remove a predicted thickness of the silicon crystal; conducting a LLS scanning to a surface of the etched silicon crystal to obtain a LLS map of the surface, a LSE size of defects, and defect bulk density; based on at least one of the LLS map of the surface, the LSE size of defects and the defect bulk density, determining a type of defect existing in the silicon crystal and/or a defect zone of each type of defect on the surface. By applying the method, the characterizing period and the characterizing cost can be reduced, plural defects such as vacancy, oxygen precipitate and dislocation can be characterized simultaneously, the characterizing accuracy can be enhanced, and the defect type and the defect zone can be determined with high reliability. In addition, the method can be applied to all crystal defect types, is easy to operate, and is an environmentally friendly method for determination of grown-in defects.