The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Dec. 08, 2021
Zing Semiconductor Corporation, Shanghai, CN;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;
Zing Semiconductor Corporation, Shanghai, CN;
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES, Shanghai, CN;
Abstract
The invention provides a measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured, conducting a thermal treatment for the wafer to remove a thermal doner in the wafer, conducting an oxidation process for the wafer to form an oxidized surface on the wafer, and measuring resistivity of the wafer. In the method, firstly, the wafer is oxidized to get the oxidized surface, so as to restrict surface variation when placing the wafer in a later process. Therefore, the resistivity measurement of the wafer surface only slightly varies.