The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Feb. 27, 2018
Applicant:

Shanghai Simgui Technology Co., Ltd., Shanghai, CN;

Inventors:

Xing Wei, Shanghai, CN;

Yongwei Chang, Shanghai, CN;

Meng Chen, Shanghai, CN;

Guoxing Chen, Shanghai, CN;

Lu Fei, Shanghai, CN;

Xi Wang, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 21/16 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/02236 (2013.01); H01L 21/164 (2013.01); H01L 21/76251 (2013.01); H01L 21/76828 (2013.01); H01L 21/02164 (2013.01); H01L 21/02255 (2013.01);
Abstract

The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.


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