Lu Fei

Title: Innovations of Lu Fei in Semiconductor Technology

Introduction

Lu Fei is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance bonding strength and substrate preparation. With a total of three patents to his name, Lu Fei continues to push the boundaries of innovation in his industry.

Latest Patents

One of Lu Fei's latest patents is an "Annealing method for improving bonding strength." This method involves providing a substrate with a bonding interface and performing a two-step annealing process. The first step occurs in an oxygen-containing atmosphere, forming an oxidation protection layer on the substrate's surface. The second step, conducted in a nitrogen-free environment, occurs at a higher temperature to further enhance bonding strength.

Another notable patent is the "Method for preparing substrate with insulated buried layer." This method includes providing a substrate with a supporting layer and an insulating layer. It involves two stages of ion implantation to create a nano cluster in the insulating layer, ensuring that the modified ions are strategically placed to optimize performance.

Career Highlights

Lu Fei is currently employed at Shanghai Simgui Technology Co., Ltd. His work at this company has allowed him to develop innovative solutions that address critical challenges in semiconductor manufacturing. His expertise in annealing methods and substrate preparation has positioned him as a key figure in the industry.

Collaborations

Lu Fei collaborates with talented individuals such as Xing Wei and Yongwei Chang. These partnerships enhance the creative process and contribute to the development of groundbreaking technologies in their field.

Conclusion

Lu Fei's contributions to semiconductor technology through his innovative patents demonstrate his commitment to advancing the industry. His work continues to inspire future developments in the field.