logo

For the Inventor, By the Inventor

Fremont, CA, United States of America

Wenge Yang

This inventor holds 32 USPTO granted patents, primarily in Semiconductor Processing. Top assignees: Advanced Micro Devices Corporation, Spansion LLC., Timbre Technologies, Inc.. Active years: 1999-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wenge Yang. Retrieved from https://idiyas.com/inventor/wenge-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32

% Patents Active = 96.9

Average Co-Inventor Count = 2.5

ph-index = 9

Forward Citations = 337(Granted Patents)


Company Filing History:

goldMedal28 out of 13,175 
 
Advanced Micro Devices Corporation
 patents
silverMedal1 out of 1,075 
 
Spansion LLC.
 patents
bronzeMedal1 out of 72 
 
Timbre Technologies, Inc.
 patents
4. 1 out of 10,918 
 
Tokyo Electron Limited
 patents
5. 1 out of 834,570 
Other
 patents

Years Active: 1999-2009

Loading Chart...
Areas of Expertise:
Plasma Etching
Critical Dimensions
Interconnect Methods
Conductive Structures
Memory Gate Etching
Dielectric Photomask
Shallow Trench Isolation
Anti-Reflective Coating
Integrated Circuit Structures
Organic Spin On Materials
Dual Damascene Techniques
Floating Gate Formation
32 patents (USPTO):Explore Patents
1. 7566181 - Controlling critical dimensions of structures formed on a wafer in semiconductor processing (2009-07-28),
2. 7217652 - Method of forming highly conductive semiconductor structures via plasma etch (2007-05-15),
3. 6878622 - Method for forming SAC using a dielectric as a BARC and FICD enlarger (2005-04-12),
4. 6645824 - Combined optical profilometry and projection microscopy of integrated circuit structures (2003-11-11),
5. 6627526 - Method for fabricating a conductive structure for a semiconductor device (2003-09-30),
6. 6596623 - Use of organic spin on materials as a stop-layer for local interconnect, contact and via layers (2003-07-22),
7. 6534411 - Method of high density plasma metal etching (2003-03-18),
8. 6515328 - Semiconductor devices with reduced control gate dimensions (2003-02-04),
9. 6482699 - Method for forming self-aligned contacts and local interconnects using decoupled local interconnect process (2002-11-19),
10. 6452225 - Method and structure of etching a memory cell polysilicon gate layer using resist mask and etched silicon oxynitride (2002-09-17),
11. 6423612 - Method of fabricating a shallow trench isolation structure with reduced topography (2002-07-23),
12. 6420240 - Method for reducing the step height of shallow trench isolation structures (2002-07-16),
13. 6416933 - Method to produce small space pattern using plasma polymerization layer (2002-07-09),
14. 6383939 - Method for etching memory gate stack using thin resist layer (2002-05-07),
15. 6376389 - Method for eliminating anti-reflective coating in semiconductors (2002-04-23),

Title: Wenge Yang: Innovator in Semiconductor Processing

Introduction

Wenge Yang, based in Fremont, CA, has made significant contributions to the field of semiconductor processing, holding an impressive 32 patents. His innovative approaches have advanced methodologies in the semiconductor industry, enhancing precision and efficiency in wafer technology.

Latest Patents

Among Yang's latest patents, two stand out for their innovative techniques. The first patent addresses the control of critical dimensions of structures formed on a wafer during semiconductor processing. This method involves developing photoresist on a film layer using a developer tool, with process variables such as temperature and development time influencing the outcome. Following this, etching steps are conducted, and critical dimensions are measured with an optical metrology tool. Adjustments to the developer tool process variables are made based on the measurements, resulting in improved accuracy in semiconductor fabrication.

The second patent focuses on forming highly conductive semiconductor structures via plasma etch. Utilizing a decoupled plasma source, this process produces a highly selective plasma etchant, creating a structure that includes a thin adhesive layer and an overlaying conductive layer. The structure boasts reduced dimensions, with a thickness of less than 3000 angstroms, while enhancing conductivity compared to previous designs.

Career Highlights

Wenge Yang has had a multifaceted career, lending his expertise to renowned companies such as Advanced Micro Devices (AMD) and Timbre Technologies. His work at these institutions has facilitated groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Yang has collaborated with several notable colleagues, including Lewis N. Shen and Fei Wang. These partnerships have enabled the exchange of ideas and fostered innovation in their respective areas of expertise.

Conclusion

Wenge Yang's remarkable contributions to semiconductor processing exemplify the spirit of innovation in the industry. With his extensive patent portfolio and collaborations, he continues to shape and enhance the technological landscape, paving the way for future advancements in semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…