Method for forming self-aligned contacts and local interconnects using decoupled local interconnect process

Abstract

A method of manufacturing a semiconductor device is provided in which multi-layer structures are formed on a semiconductor substrate to form core and peripheral regions. Sidewall spacers are formed around the multi-layer structures and source and drain regions are implanted adjacent the sidewall spacers and a stop layer is deposited over the semiconductor substrate after which a dielectric layer is deposited over the stop layer. A first and second photoresist contact masks are deposited, processed, and used to respectively etch core and peripheral contact openings. The first and photoresist contact masks are respectively removed after each etching step. A conductive material is deposited over the dielectric layer and in the core and peripheral contact openings and is chemical mechanical planarized to remove the conductive material over the dielectric layer so the conductive material is left isolated in the core and peripheral contact openings with core contacts to the source/drain regions and peripheral contacts to the local interconnect gate contacts of the multi-layer structures and the source/drain regions.