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For the Inventor, By the Inventor

Cupertino, CA, United States of America

YongZhong Hu

This inventor holds 26 USPTO granted patents and 1 published patent application, primarily in MOSFET Technology. Top assignees: Alpha Omega Semiconductor Inc., Advanced Micro Devices Corporation, Lattice Semiconductor Corporation. Active years: 2001-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: YongZhong Hu. Retrieved from https://idiyas.com/inventor/yongzhong-hu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 80.8

Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 171(Granted Patents)


Location History:

  • San Jose, CA (US) (2001 - 2005)
  • Cupertino, CA (US) (2004 - 2020)

Company Filing History:

goldMedal14 out of 753 
 
Alpha Omega Semiconductor Inc.
 patents
silverMedal6 out of 13,168 
 
Advanced Micro Devices Corporation
 patents
bronzeMedal5 out of 764 
 
Lattice Semiconductor Corporation
 patents
4. 1 out of 3,725 
 
Semiconductor Components Industries, LLC
 patents

Years Active: 2001-2020

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Areas of Expertise:
MOSFET
EEPROM
Transistor
High Voltage
Low Resistance
Memory Cell
Capacitance
Polysilicon Process
Schottky Barrier
Device Configuration
Floating Gate
Interconnects
26 patents (USPTO):Explore Patents
1. 10629474 - Integrated isolation capacitance structure (2020-04-21),
2. 10008598 - Top drain LDMOS (2018-06-26),
3. 9337329 - Method of fabrication and device configuration of asymmetrical DMOSFET with schottky barrier source (2016-05-10),
4. 9159828 - Top drain LDMOS (2015-10-13),
5. 8835251 - Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process (2014-09-16),
6. 8524558 - Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET (2013-09-03),
7. 8236653 - Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions (2012-08-07),
8. 8105905 - Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions (2012-01-31),
9. 8058687 - Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET (2011-11-15),
10. 8022482 - Device configuration of asymmetrical DMOSFET with schottky barrier source (2011-09-20),
11. 7855422 - Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process (2010-12-21),
12. 7829941 - Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions (2010-11-09),
13. 7824977 - Completely decoupled high voltage and low voltage transistor manufacturing processes (2010-11-02),
14. 7805687 - One-time programmable (OTP) memory cell (2010-09-28),
15. 7256446 - One time programmable memory cell (2007-08-14),

Title: The Innovative Journey of YongZhong Hu

Introduction: YongZhong Hu, a visionary inventor based in Cupertino, CA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: YongZhong Hu holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of innovation.

Career Highlights: With a background in computer science and engineering, YongZhong Hu has a successful track record of developing cutting-edge technologies that have revolutionized various industries. His keen eye for identifying gaps in the market and his dedication to solving complex problems have set him apart as a leading innovator in the tech world.

Collaborations: Throughout his career, YongZhong Hu has collaborated with top research institutions, leading companies, and brilliant minds in the field to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: YongZhong Hu's relentless pursuit of innovation and his passion for creating technologies that make a difference have solidified his position as a respected inventor in the tech community. His work continues to inspire future generations of inventors to think outside the box and push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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