The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Mar. 27, 2007
Applicants:
Yongzhong HU, Cupertino, CA (US);
Sung-shan Tai, San Jose, CA (US);
Inventors:
YongZhong Hu, Cupertino, CA (US);
Sung-Shan Tai, San Jose, CA (US);
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor wafer includes at least a partially manufactured high voltage transistor covered by a high-voltage low voltage decoupling layer and at least a partially manufactured low voltage transistor with the high-voltage low-voltage decoupling layer etched off for further performance of a low-voltage manufacturing process thereon. The high-voltage low-voltage decoupling layer comprising a high temperature oxide (HTO) oxide layer of about 30-150 Angstroms and a low-pressure chemical vapor deposition (LPCVD) nitride layer.