The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Jan. 16, 2019
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

YongZhong Hu, Cupertino, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 27/108 (2006.01); H01L 29/08 (2006.01); H01L 27/08 (2006.01); H01L 21/76 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/76 (2013.01); H01L 27/0805 (2013.01); H01L 27/10829 (2013.01); H01L 27/10861 (2013.01); H01L 28/60 (2013.01); H01L 28/75 (2013.01); H01L 29/0642 (2013.01); H01L 29/0847 (2013.01); H01L 27/0629 (2013.01);
Abstract

Various capacitive isolation structures which can be readily incorporated into existing IC manufacturing procedures. An illustrative method embodiment for forming an isolation capacitance includes: (a) forming a recess on a surface of an integrated circuit substrate, the recess having a bottom surface; (b) coating the bottom surface with an insulating layer; (c) overlaying a bottom electrode on the insulating layer; (d) filling the recess with a bulk insulator having a minimum thickness no less than half a depth of the recess; and (e) depositing a top electrode above the bulk insulator.


Find Patent Forward Citations

Loading…