The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2002

Filed:

May. 31, 2000
Applicant:
Inventors:

Ramkumar Subramanian, San Jose, CA (US);

Minh Van Ngo, Fremont, CA (US);

Kashmir Sahota, Fremont, CA (US);

Yongzhong Hu, San Jose, CA (US);

Hiroyuki Kinoshita, Sunnyvale, CA (US);

Fei Wang, San Jose, CA (US);

Wenge Yang, Fremont, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

The present invention provides a method for manufacturing a semiconductor device without the use of an anti-reflective coating. In one embodiment, electrical devices are formed on a semiconductor substrate. A material with a low dielectric constant such as an oxide is then deposited. The low dielectric layer is then covered with photoresist and photolithographically processed and subsequently developed. The low dielectric layer is then etched using the pattern formed on the photoresist and the photoresist is later removed. Because this process works in any similar circumstances, good examples of its application are the formation of both contacts and local interconnects.


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Subramanian, Ramkumar. (2002). Method for eliminating anti-reflective coating in semiconductors (U.S. Patent No. 6376389). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6376389

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