The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Apr. 01, 1999
Applicant:
Inventors:
Bhanwar Singh, Morgan Hill, CA (US);
Bharath Rangarajan, Santa Clara, CA (US);
Wenge Yang, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 ; H01L 2/1027 ;
U.S. Cl.
CPC ...
G03C 5/00 ; H01L 2/1027 ;
Abstract
The present invention relates to a method for forming an etch mask. A photoresist layer is patterned, wherein d is a smallest space dimension of an exposed area of a layer underlying the photoresist layer. A polymer layer is formed to be conformal to the patterned photoresist layer and exposed portions of the underlayer. The polymer layer is etched to form polymer sidewalls, the polymer sidewalls reducing the smallest space dimension of the exposed underlayer area to d , wherein d <d .