The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Jul. 01, 2003
Applicants:
Wenge Yang, Fremont, CA (US);
Ramkumar Subramanian, San Jose, CA (US);
Fei Wang, San Jose, CA (US);
Lewis Shen, Cupertino, CA (US);
Inventors:
Wenge Yang, Fremont, CA (US);
Ramkumar Subramanian, San Jose, CA (US);
Fei Wang, San Jose, CA (US);
Lewis Shen, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/4763 ; H01L021/44 ; H01L021/311 ; H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A method is provided for manufacturing a semiconductor device on a semiconductor substrate using a dielectric as a bottom anti-reflective coating for formation of a photoresist contact opening which is used to enlarge the Final Inspection Critical Dimension (FICD) of the conductive contact. A high selectivity etch is used to form a tapered contact.