The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2003

Filed:

Mar. 17, 2000
Applicant:
Inventors:

Ramkumar Subramanian, San Jose, CA (US);

Wenge Yang, Fremont, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/13205 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/13205 ; H01L 2/131 ; H01L 2/1469 ;
Abstract

The present invention relates to a methodology of fabricating a local interconnect. The methodology includes the steps of forming an organic stop layer over a semiconductor structure having at least one conductive region, forming an insulating layer over the organic layer, forming a photoresist layer over the insulating layer, patterning the photoresist layer with at least one opening above the at least one conductive region, etching at least one opening in the insulating layer, concurrently stripping the photoresist layer and an exposed portion of the organic layer and filling the at least one opening with a conductive material to form the local interconnect.


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