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For the Inventor, By the Inventor

Plano, TX, United States of America

Wei William Lee

USPTO Granted Patents = 16

Average Co-Inventor Count = 3.6

ph-index = 8

Forward Citations = 238(Granted Patents)


Location History:

  • Richardson, TX (US) (1982 - 1987)
  • Plano, TX (US) (2000 - 2005)

Company Filing History:

goldMedal16 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 1982-2005

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16 patents (USPTO):Explore Patents
1. 6930028 - Antireflective structure and method (2005-08-16),
2. 6800928 - Porous integrated circuit dielectric with decreased surface porosity (2004-10-05),
3. 6774489 - Dielectric layer liner for an integrated circuit structure (2004-08-10),
4. 6753559 - Transistor having improved gate structure (2004-06-22),
5. 6635229 - Method for low perfluorocarbon compound emission (2003-10-21),
6. 6559050 - Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices (2003-05-06),
7. 6436746 - Transistor having an improved gate structure and method of construction (2002-08-20),
8. 6383870 - Semiconductor device architectures including UV transmissive nitride layers (2002-05-07),
9. 6351039 - Integrated circuit dielectric and method (2002-02-26),
10. 6307230 - Transistor having an improved sidewall gate structure and method of construction (2001-10-23),
11. 6274900 - Semiconductor device architectures including UV transmissive nitride layers (2001-08-14),
12. 6214423 - Method of forming a polymer on a surface (2001-04-10),
13. 6117741 - Method of forming a transistor having an improved sidewall gate structure (2000-09-12),
14. 6063692 - Oxidation barrier composed of a silicide alloy for a thin film and (2000-05-16),
15. 4657844 - Plasma developable negative resist compositions for electron beam, X-ray (1987-04-14),

Title: Innovations of Wei William Lee

Introduction

Wei William Lee is a prominent inventor based in Plano, TX (US). He has made significant contributions to the field of integrated circuit fabrication, holding a total of 16 patents. His work focuses on enhancing the efficiency and effectiveness of semiconductor technologies.

Latest Patents

Among his latest patents is an innovative antireflective structure and method. This invention provides integrated circuit fabrication with a silicon oxynitride antireflective layer for gate location. It also includes patterned photoresist linewidth reduction for gate length definition, followed by interconnect definition without patterned photoresist linewidth reduction. This technology offers the advantages of an antireflective layer that is compatible with linewidth reduction and polysilicon etching. Another notable patent is for a porous integrated circuit dielectric with decreased surface porosity. This invention involves a surface treatment for porous silica to enhance the adhesion of overlying layers. The treatments include surface group substitution, pore collapse, and a gap-filling layer that invades open surface pores of xerogel.

Career Highlights

Wei William Lee has established a successful career at Texas Instruments Corporation, where he continues to innovate and develop new technologies. His expertise in semiconductor fabrication has positioned him as a key player in the industry.

Collaborations

Throughout his career, Wei has collaborated with notable colleagues, including Maureen A Hanratty and Amitava Chatterjee. These collaborations have contributed to the advancement of various projects and innovations within the company.

Conclusion

Wei William Lee's contributions to integrated circuit technology and his impressive portfolio of patents highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor fabrication, showcasing the importance of innovation in technology.

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