The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Jan. 05, 1999
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A transistor,is formed on an outer surface of a substrate,. The transistor comprises a floating gate,and a control gate,. An outer encapsulation layer,and sidewall bodies,and,comprise silicon nitride that is deposited in such a manner such that the material is transmissive to ultraviolet radiation. In this manner, the sidewall bodies,and,and the layer,can be used as an etch stop during the formation of a drain contact,. These layers will also permit the transmission of ultraviolet radiation to the floating gate,to enable the erasure of floating gate