The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Jun. 05, 1998
Applicants:
Maureen A. Hanratty, Dallas, TX (US);
Daty M. Rogers, Garland, TX (US);
Qizhi He, Plano, TX (US);
Wei William Lee, Plano, TX (US);
Inventors:
Maureen A. Hanratty, Dallas, TX (US);
Daty M. Rogers, Garland, TX (US);
Qizhi He, Plano, TX (US);
Wei William Lee, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/3205 ; H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
The present invention provides integrated circuit fabrication with a silicon oxynitride antireflective layer for gate location plus patterned photoresist linewidth reduction for gate length definition followed by interconnect definition without patterned photoresist linewidth reduction. This has the advantages of an antireflective layer compatible with linewidth reduction and polysilicon etching.