The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
May. 28, 1998
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/940 ; H01L 2/352 ; H01L 2/358 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/940 ; H01L 2/352 ; H01L 2/358 ; H01L 2/14763 ;
Abstract
A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer ( ) which invades open surface pores ( ) of xerogel ( ).
Jin, Changming. (2002). Integrated circuit dielectric and method (U.S. Patent No. 6351039). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6351039
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile