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For the Inventor, By the Inventor

Plano, TX, United States of America

Changming Jin

This inventor holds 21 USPTO granted patents and 1 EPO patent, primarily in Integrated Circuit Dielectrics. Top assignee: Texas Instruments Corporation. Active years: 1999-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Changming Jin. Retrieved from https://idiyas.com/inventor/changming-jin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21

% Patents Active = 100.0


Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 252(Granted Patents)


Location History:

  • Austin, TX (US) (2001)
  • Dallas, TX (US) (2000 - 2004)
  • Plano, TX (US) (1999 - 2011)

Company Filing History:

goldMedal21 out of 29,922 
 
Texas Instruments Corporation
 patents

Years Active: 1999-2011

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Areas of Expertise:
Low-k Dielectric Films
Thermal Stability
Copper Damascene Structure
Hillock Formation
Etch Stop Layer
Chemical Treatment
Phase Separation
Adhesion Improvement
Integrated Circuit Manufacturing
Silanol Reduction
Porous Dielectrics
Metallization Techniques
21 patents (USPTO):Explore Patents
1. 7910936 - N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films (2011-03-22),
2. 7745335 - Semiconductor device manufactured by reducing hillock formation in metal interconnects (2010-06-29),
3. 7732324 - Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer (2010-06-08),
4. 7476602 - [object Object] (2009-01-13),
5. 7187080 - Semiconductor device with a conductive layer including a copper layer with a dopant (2007-03-06),
6. 7037823 - Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects (2006-05-02),
7. 6911394 - Semiconductor devices and methods of manufacturing such semiconductor devices (2005-06-28),
8. 6903000 - System for improving thermal stability of copper damascene structure (2005-06-07),
9. 6838300 - Chemical treatment of low-k dielectric films (2005-01-04),
10. 6800928 - Porous integrated circuit dielectric with decreased surface porosity (2004-10-05),
11. 6800547 - Integrated circuit dielectric and method (2004-10-05),
12. 6784121 - Integrated circuit dielectric and method (2004-08-31),
13. 6723636 - Methods for forming multiple damascene layers (2004-04-20),
14. 6583053 - Use of a sacrificial layer to facilitate metallization for small features (2003-06-24),
15. 6573167 - Using a carbon film as an etch hardmask for hard-to-etch materials (2003-06-03),

Title: The Innovative Journey of Changming Jin

Introduction: Changming Jin, a talented inventor based in Plano, TX, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Changming Jin holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Changming Jin has successfully developed cutting-edge solutions that have revolutionized various industries. His commitment to innovation and excellence is evident in the impact of his work.

Collaborations: Throughout his career, Changming Jin has collaborated with leading research institutions, universities, and tech companies to further advance his inventions. His ability to work effectively in multidisciplinary teams has led to the successful implementation of his ideas.

Conclusion: Changming Jin's relentless pursuit of innovation and his dedication to pushing the boundaries of technology make him a true pioneer in the world of inventions. His work continues to inspire and shape the future of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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