The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Feb. 04, 2003
Changming Jin, Plano, TX (US);
Phillip D. Matz, McKinney, TX (US);
Heungsoo Park, McKinney, TX (US);
Patricia B. Smith, Colleyville, TX (US);
Andrew J. Mckerrow, Dallas, TX (US);
Changming Jin, Plano, TX (US);
Phillip D. Matz, McKinney, TX (US);
Heungsoo Park, McKinney, TX (US);
Patricia B. Smith, Colleyville, TX (US);
Andrew J. McKerrow, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer () formed of a substitution group depleted silicon oxide, such as an organosilicate glass, is disclosed. Subsequent plasma processing has been observed to break bonds in such an insulating layer (), resulting in molecules at the surface of the film with dangling bonds. Eventually, the damaged insulating layer () includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer () to a thermally or plasma activated fluorine, hydrogen, or nitrogen, which reacts with the damaged molecules to form a passivated surface for the insulating layer ().