The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2010

Filed:

Dec. 21, 2006
Applicants:

Ju-ai Ruan, Plano, TX (US);

Changming Jin, Plano, TX (US);

Sopa Chevacharoenkul, Richardson, TX (US);

Satyavolu Papa Rao, Garland, TX (US);

Tae Seung Kim, Dallas, TX (US);

Inventors:

Ju-Ai Ruan, Plano, TX (US);

Changming Jin, Plano, TX (US);

Sopa Chevacharoenkul, Richardson, TX (US);

Satyavolu Papa Rao, Garland, TX (US);

Tae Seung Kim, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01); B05D 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating an interconnect structure, comprising exposing an empty deposition chamber to a process that includes generating reactive species produced from a source gas in the presence of a plasma. The method further comprises terminating the plasma and then introducing a semiconductor substrate with a metal layer thereon into the chamber while the reactive species are present in the chamber.


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