The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Jul. 27, 2004
Applicants:
Phillip D. Matz, McKinney, TX (US);
Sameer Ajmera, Richardson, TX (US);
Changming Jin, Plano, TX (US);
Trace Q. Hurd, Plano, TX (US);
Inventors:
Phillip D. Matz, McKinney, TX (US);
Sameer Ajmera, Richardson, TX (US);
Changming Jin, Plano, TX (US);
Trace Q. Hurd, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A trench and via structure is formed in a low k dielectric layer () formed over a silicon substrate (). Super critical COand a first silylization agent are used to form a chemically bonded high density surface layer (). Silanol species are removed from the low k dielectric layer () using super critical COand a second silylization agent. A barrier layer () and copper () are used to fill the trench and via structure.