The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Dec. 09, 2008
Applicants:
Sameer Kumar Ajmera, Richardson, TX (US);
Patricia Beauregard Smith, Colleyville, TX (US);
Changming Jin, Plano, TX (US);
Inventors:
Sameer Kumar Ajmera, Richardson, TX (US);
Patricia Beauregard Smith, Colleyville, TX (US);
Changming Jin, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.