The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Jul. 06, 2001
Amitava Chatterjee, Plano, TX (US);
Wei William Lee, Plano, TX (US);
Greg A. Hames, Dallas, TX (US);
Qizhi He, Plano, TX (US);
Maureen Hanratty, Dallas, TX (US);
Iqbal Ali, San Jose, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A gate structure which includes a semiconductor substrate having a channel region, a gate insulator adjacent the channel region of the semiconductor substrate and a conductible gate adjacent the gate insulator. A primary insulation layer is adjacent the semiconductor substrate, the primary insulation layer having an opening where the gate insulator contacts the semiconductor substrate and an isolation dielectric layer adjacent the primary insulation layer, the isolation dielectric layer having an opening where the conductible gate is located and the isolation dielectric layer having a silicon oxynitride material.