The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Dec. 14, 1998
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G02F / ;
U.S. Cl.
CPC ...
438431 ; 438433 ; 438473 ; 438580 ; 438581 ; 438582 ; 438583 ; 438595 ; 438767 ; 438768 ; 438783 ; 438785 ;
Abstract
A method of fabricating an oxidation barrier for a thin film is provided. The method may include forming a thin film (10) outwardly from a semiconductor substrate (12) and separated from the semiconductor substrate (12) by a primary insulator layer (14). A reactive layer (16) may be formed in-situ adjacent to the thin film (10). An oxidation barrier (20) may be formed by a chemical reaction between the thin film (10) and the reactive layer (16). The oxidation barrier (20) may comprise a silicide alloy that operates to reduce oxidation of the thin film (10).