Richardson, TX, United States of America

Hong Yang

This inventor holds 34 USPTO granted patents and 5 published patent applications and 1 EPO patent, primarily in Trench MOSFET Technology. Top assignees: Texas Instruments Corporation, Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hong Yang. Retrieved from https://idiyas.com/inventor/hong-yang-8elagpt4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 97.1

 

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 88(Granted Patents)


Location History:

  • Dallas, TX (US) (2000 - 2002)
  • Richardson, TX (US) (2014 - 2023)

Company Filing History:


Years Active: 2000-2026

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Areas of Expertise:
Trench Gate FET
MOSFET
Oxide Layer
Semiconductor Device
Polysilicon Field Plate
Deep Trench Oxide
Sinker Contacts
Fabrication Process
Field Effect Transistor
Shielding Techniques
Threshold Voltage Shift
Tungsten Plug
34 patents (USPTO):Explore Patents

Title: The Innovative Mind of Hong Yang: A Semiconductor Pioneer

Introduction

Hong Yang is a renowned inventor based in Richardson, TX, who has significantly contributed to the field of semiconductor technology. With an impressive portfolio of 31 patents, he is recognized for his innovative solutions that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations is the "Trench Shield Isolation Layer," which introduces a semiconductor device featuring a MOS transistor. This invention outlines a unique design where a trench is formed in the substrate, allowing for a shield that enhances the electrical isolation of the gate from the contact portion. Such advancements offer methods for forming robust semiconductor devices.

Another noteworthy patent is the "Vertical Trench Gate MOSFET with Integrated Schottky Diode," which details an integrated circuit design that includes various MOSFET cells. This invention strategically positions p-type body regions and n-type source regions to optimize performance in semiconductor applications. The integration of a Schottky diode into this design represents a significant leap in efficiency and functionality.

Career Highlights

Hong Yang's career has been marked by his tenure at leading companies in the semiconductor industry, including Texas Instruments Corporation and Chartered Semiconductor Manufacturing Ltd. His work in these organizations has undoubtedly influenced advancements in semiconductor technology and production methodologies.

Collaborations

Throughout his career, Hong has collaborated with several distinguished professionals, including Yunlong Liu and Seetharaman Sridhar. These partnerships have played a crucial role in the development and realization of his innovative patents, showcasing the power of teamwork in driving technological progress.

Conclusion

Hong Yang's contributions to semiconductor innovation through his numerous patents exemplify the impact of thoughtful engineering and dedicated research. As he continues to push the boundaries of technology, his inventions pave the way for advancements that could redefine the semiconductor landscape for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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