The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
May. 17, 2021
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Hong Yang, Richardson, TX (US);
Michael F Chisholm, Garland, TX (US);
Yufei Xiong, Chengdu, CN;
Yunlong Liu, Chengdu, CN;
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); C23C 16/30 (2006.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10W 10/17 (2026.01); H10W 10/0145 (2026.01); H10W 10/0148 (2026.01); C23C 16/306 (2013.01);
Abstract
In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.