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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Tzu-Ning Fang

This inventor holds 19 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignees: Spansion LLC., Advanced Micro Devices Corporation, Intel Ndtm US LLC. Active years: 2005-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tzu-Ning Fang. Retrieved from https://idiyas.com/inventor/tzu-ning-fang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 68.4


Average Co-Inventor Count = 4.6

ph-index = 6

Forward Citations = 182(Granted Patents)


Location History:

  • San Jose, CA (US) (2011)
  • Palo Alto, CA (US) (2005 - 2015)

Company Filing History:

goldMedal15 out of 1,075 
 
Spansion LLC.
 patents
silverMedal3 out of 13,168 
 
Advanced Micro Devices Corporation
 patents
bronzeMedal1 out of 52 
 
Intel Ndtm US LLC
 patents

Years Active: 2005-2025

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19 patents (USPTO):Explore Patents
1. 12394492 - Memory cell sensing circuit with adjusted bias from pre-boost operation (2025-08-19),
2. 9012299 - Metal-insualtor-metal (MIM) device and method of formation thereof (2015-04-21),
3. 8828837 - Metal-insulator-metal (MIM) device and method of formation thereof (2014-09-09),
4. 8445913 - Metal-insulator-metal (MIM) device and method of formation thereof (2013-05-21),
5. 8098521 - Method of providing an erase activation energy of a memory device (2012-01-17),
6. 7916529 - Pin diode device and architecture (2011-03-29),
7. 7706168 - Erase, programming and leakage characteristics of a resistive memory device (2010-04-27),
8. 7646624 - Method of selecting operating characteristics of a resistive memory device (2010-01-12),
9. 7564708 - Method of programming memory device (2009-07-21),
10. 7499309 - Using organic semiconductor memory in conjunction with a MEMS actuator for an ultra high density memory (2009-03-03),
11. 7474579 - Use of periodic refresh in medium retention memory arrays (2009-01-06),
12. 7443710 - Control of memory devices possessing variable resistance characteristics (2008-10-28),
13. 7379317 - Method of programming, reading and erasing memory-diode in a memory-diode array (2008-05-27),
14. 7286388 - Resistive memory device with improved data retention (2007-10-23),
15. 7273766 - Variable density and variable persistent organic memory devices, methods, and fabrication (2007-09-25),

Title: Inventor Tzu-Ning Fang: Pioneering Innovations in Palo Alto

Introduction: Tzu-Ning Fang is a distinguished inventor based in Palo Alto, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tzu-Ning Fang holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Tzu-Ning Fang has worked with leading tech companies in Silicon Valley, spearheading projects that have revolutionized the industry. His keen insight and problem-solving skills have led to the development of cutting-edge solutions that have had a lasting impact.

Collaborations: Throughout his career, Tzu-Ning Fang has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have resulted in the creation of transformative technologies that have shaped the future of various industries.

Conclusion: Tzu-Ning Fang's dedication to innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor in Palo Alto and beyond. His work continues to inspire the next generation of inventors and pave the way for a more technologically advanced future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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