The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Jun. 23, 2005
An Chen, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Tzu-ning Fang, Palo Alto, CA (US);
Yi-ching Jean Wu, Sunnyvale, CA (US);
Colin S. Bill, Cupertino, CA (US);
An Chen, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Tzu-Ning Fang, Palo Alto, CA (US);
Yi-Ching Jean Wu, Sunnyvale, CA (US);
Colin S. Bill, Cupertino, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
In the present method of programming a memory device from an erased state, the memory device includes first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes. In the programming method, (i) an electrical potential is applied across the first and second electrodes from higher to lower potential in one direction to reduce the resistance of the memory device, and (ii) an electrical potential is applied across the first and second electrodes from higher to lower potential in the other direction to further reduce the resistance of the memory device.