The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Nov. 08, 2004
Tzu-ning Fang, Palo Alto, CA (US);
Michael Allen Van Buskirk, Saratoga, CA (US);
Colin S. Bill, Cupertino, CA (US);
Tzu-Ning Fang, Palo Alto, CA (US);
Michael Allen Van Buskirk, Saratoga, CA (US);
Colin S. Bill, Cupertino, CA (US);
Spansion, LLC, Sunnyvale, CA (US);
Abstract
Systems and methods employing at least one constant current source to facilitate programming of an organic memory cell and/or employing at least one constant voltage source to facilitate erasing of a memory device. The present invention is utilized in single memory cell devices and memory cell arrays. Employing a constant current source prevents current spikes during programming and allows accurate control of a memory cell's state during write cycles, independent of the cell's resistance. Employing a constant voltage source provides a stable load for memory cells during erase cycles and allows for accurate voltage control across the memory cell despite large dynamic changes in cell resistance during the process.